
NE6510179A
TYPICAL PERFORMANCE CURVES
DRAIN CURRENT vs.
DRAIN VOLTAGE
(T A = 25 ° C)
TRANSCONDUCTANCE AND DRAIN
CURRENT vs. GATE VOLTAGE
3
2.50
1.00
2.5
V GS =
2.00
0.8
0V
2.0
1.5
1.0
-0.2 V
-0.4 V
1.50
1.00
0.6
0.4
0.5
-0.6 V
0.50
0.2
-0.8 V
0
0
1
2
3
4
5
6
-1.0 V
0
-1.0
-.80
-.60
-.40
-.20
0.00
0
1.0E+07
Drain Voltage, V D (V)
ARRHENIUS PLOTS vs.
JUNCTION TEMPERATURE
30
Gate Voltage, G V (V)
MAXIMUM AVAILABLE GAIN vs.
FREQUENCY
25
1.0E+06
1.35E+06 Hrs
(T CH = 110 ° C)
20
1.0E+05
E A = 1.0 E V
15
1.0E+04
1805 Hrs
(T CH = 217 ° C)
10
2.2 V, 200 mA
4.6 V, 300 mA
3.5 V, 150 mA
1.0E+03
5
1.6
1.8
2
2.2
2.4
2.6
2.8
3
0.1
4.0
Junction Temperature, T/T CH (1/K/1000)
Frequency, GHz